Femtosecond studies of carrier dynamics in InGaN
Identifieur interne : 001B37 ( France/Analysis ); précédent : 001B36; suivant : 001B38Femtosecond studies of carrier dynamics in InGaN
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Abstract
Ultrafast carrier dynamics in In0.16Ga0.84N were investigated using femtosecond transient transmission measurements. We observed a fast initial carrier cooling on a time scale of 500 fs followed by a slow relaxation process which persisted longer than 5 ps due to a hot phonon effect. Band gap renormalization induced transient absorption was observed using a probe photon energy 300 meV above the band edge. These results were compared to a model based on the numerical resolution of the carrier Boltzmann equations. © 1997 American Institute of Physics.
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Vallee</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lab. dOptique Quantique du C.N.R.S., Ecole Polytechnique, 91128 Palaiseau Cedex, France</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Lab. dOptique Quantique du C.N.R.S., Ecole Polytechnique, 91128 Palaiseau Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. 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Denbaars</name></author></titleStmt><publicationStmt><idno type="inist">97-0561950</idno><date when="1997-04-14">1997-04-14</date><idno type="stanalyst">PASCAL 97-0561950 AIP</idno><idno type="RBID">Pascal:97-0561950</idno><idno type="wicri:Area/Main/Corpus">018512</idno><idno type="wicri:Area/Main/Repository">017F05</idno><idno type="wicri:Area/France/Extraction">001B37</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Boltzmann equation</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Phonons</term><term>Renormalization</term><term>Semiconductor epitaxial layers</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7847</term><term>7361E</term><term>6320</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Bande interdite</term><term>Phonon</term><term>Renormalisation</term><term>Equation Boltzmann</term><term>Couche épitaxique semiconductrice</term><term>Spectre résolution temporelle</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Ultrafast carrier dynamics in In<sub>0.16</sub>Ga<sub>0.84</sub>N were investigated using femtosecond transient transmission measurements. 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